SanDisk/Toshiba Enters 10nm Flash Process

In 2010, the manufacturing process of flash memory chips is generally 30nm. In 2011, it will become the beginning of the popularization of the 20nm level. At the same time, the investment and R&D of 10nm-level processes will start gradually. SanDisk said recently: “Our top operating expense investment in 2011 was R&D, including the on-line production of the Fab 5 wafer fab, as well as technology investments in (10nm class) and more advanced NAND flash manufacturing processes.”

SanDisk pointed out that due to the global wave of mobile devices, the market demand for flash memory is rapidly increasing, so SanDisk will cooperate with Toshiba to accelerate the production of 2bpc (2 bits per cell), 3bpc and other specifications of MLC NAND flash memory chips. As of January 2, 2011, SanDisk’s revenue for the fourth quarter was US$1.33 billion, a year-on-year increase of 7% and a year-on-year increase of 8%. Last year’s total revenue was US$4.83 billion, a significant increase of 35% compared to US$3.57 billion in 2009; The quarterly GAAP audited net profit was US$485 million (EPS 201 million US dollars), which was a year-on-year increase of 43% and a year-on-year increase of 51%. The annual net profit was US$1.3 billion, an increase of 31% over the same period of last year.