Nichia has not provided reliability data for 515 nm lasers, but they have produced another 510-513 nm laser diode that can operate for 500 hours without being charged. After more than 500 hours, the laser performance will gradually reduce. Nichia's researchers define the useful life of the laser based on a 30% increase in operating current compared to the initial value. It is estimated that the laser can last up to 5,000 hours.
The Nichia team used diodes separated by a separate confinement heterostructure (SCH) to produce lasers, almost identical to the designs they published in 2001. The deposition of AlInGaN thin films on a free-standing c-plane GaN substrate by an optimized MOCVD process is the key to producing green light in high indium content materials.
The Nichia team said that they improved the epitaxial layer, especially the multiple quantum well layer (MQW) growth conditions, while also improving the crystal quality of the high indium-rich InGaN active layer, but did not further publish details about the optimization conditions. Nichia has previously published an InGaN laser diode with a wavelength of 488 nm, but the non-radiative region is generated due to poor crystal quality, and a dark region is exhibited under photoluminescence (PL) analysis. Nichia's Takashi Mukai et al. pointed out that these areas have been eliminated in the design of new devices.
At room temperature, the current and current density thresholds of the 515 nm laser diode are 53 mA and 4.4 kA/cm2, respectively. Under the operating current of 88 mA and 5.5 V, the output power is 5 mW. The operating wavelength is 510- The 513nm laser diode has a maximum wavelength shift of 0.022nm/K due to temperature changes at room temperature, which is much smaller than the recently launched green laser diodes from Osram and Rohm.
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