Nanoelectronic device's low electron transport properties and applications

Zhang Zhiyuan (91404 troop, Qinhuangdao 066000, Hebei) has a huge role in electronics. In addition, it is necessary to strengthen the application of nanoelectronic devices with fewer electrons and promote the development of nanoelectronic devices in China.

With the reduction of device size and the continuous improvement of integration, in the future development process, nanoelectronic information will become the mainstream trend of development. Nanoelectronic devices will also become the focus of long-term research and development. The few electronic systems in nanoelectronic devices have ultra-low power consumption and faster working speed. Therefore, we must conduct a comprehensive analysis of the transport properties of less electrons in nanoelectronic devices, so as to promote the effective application of less electrons in nanoelectronic devices.

1 Basic Theory of Charge Transport in Nanoelectronic Devices Due to the quantum size effect, there are four basic phenomena in nanoelectronic devices: conductance quantization, Coulomb blocking effect, universal conductance fluctuation, and quantum coherence benefit. In the single charge transport phenomenon, it is necessary to ensure that the capacitance of the quantum dot is very small, and the ambient temperature is also in a very low state; in addition, the barrier resistance between the quantum dot and the two electrodes is much higher than the quantum resistance.

In the quantum dot confinement system, due to the applied bias, the number of its own free electrons is continuously reduced or even depleted. At this time, a system with fewer electrons will be formed.

The low-electron system has only a small amount of electrons to participate in transport activities. When analyzing the nature of low-electron transport, it is necessary to fully consider the spin effect existing in the electron itself and the interaction between the electrons. In a low-electron system, the separation of energy levels will also have a great influence on the transport properties of the low-electron system.

For example, in an external magnetic field, when the energy level splits, the energy level occupancy of electrons will change accordingly with the change of the magnetic field. Under different magnetic field conditions, the electron transport situation is also different.

2 The energy level change in the electronic device with less electron transport properties and magnetic field. The low-electron transport property mainly assumes that the capacitance on the quantum dot is a constant capacitance, and at the same time, the interaction between the neglected charges must be effectively analyzed in the discrete single-electron energy spectrum. When the magnetic field continues to increase, the energy level will continue to split correspondingly, and at the same time, the electron occupation state will also change accordingly. When the feature length is reduced, the two electrons occupying the same energy level will be closer together. At this time, the Coulomb interaction between the electrons will continue to increase, and the nano-limiting benefit will be significantly enhanced. In the case of a certain magnetic field, one of the electrons jumps to an energy state farther from itself, mainly between different angular momentums, and the electrons will jump.

Kondo effect. The Kondo effect is mainly due to the existence of not only localized electrons on quantum dots but also non-localized electrons with two sources and drains in nanoelectronic devices. The main manifestation of Kondo effect is a process of virtual exchange. When the Coulomb is clogged, the original electrons cannot be transported, but when the number of electrons on the quantum dot is odd, then there must be a single spin state on the quantum dot and no pairing. electronic. When the unpaired electrons jump to the empty state above the drain, electrons with opposite spin directions above the source will enter the quantum dots. During the entire process of electron transport, the electrons on the quantum dots are involved in the transport Spin reversal occurs in all electrons.

3 The application of few electrons in nanoelectronic devices With the rapid development of science and technology and the deepening of theoretical analysis, the research work on nanoelectronic devices has attracted the attention of many researchers, and at the same time, the research work on nanoelectronic devices has also been achieved A great degree of progress. In 1998, compared with ordinary single-electron transistors, the RF single-electron transistors studied had a sensitivity higher than that of ordinary single-electron transistors by almost two orders of magnitude. The radio frequency single electron transistor is mainly formed by effectively combining the single electron transistor and the quantum superconducting interferometer. In the field of quantum information, the researched energy states of double qubits are mainly measured in silicon double quantum dot systems. In order to effectively control the two-electron spin state effectively, a dual quantum dot system can be used at high frequencies.

When nanoelectronic devices are effectively applied to the field of microelectronics, various problems will be encountered during the process of entering the field of nanoelectronics, which requires scientific researchers to be proficient in high-tech level and theoretical knowledge. It usually involves knowledge of physical mechanisms, technology, and economics. Therefore, in order for nanoelectronic devices to be widely and effectively applied in the electronics field, several issues must be resolved.

In the manufacturing process of nanoelectronic devices, it can be compatible with the silicon planar process; it can effectively control the size and number of quantum dots, and also must effectively control the degree of coupling between quantum dots; (3) ensure nanoelectronic devices Can work in a stable room temperature environment. In the calculation of quantum, how to scientifically and effectively control the electronic transportation, so as to comprehensively realize the quantum state transmission, processing and storage. And the main problem is how to effectively avoid the interference of the external environment, and also effectively maintain the coherence between the quantum state hosts. In order to fundamentally solve these problems, technicians must fully master the ability to improve the fine process technology, and also must be fully proficient in the mechanism of less electronic transport materials.

4 Conclusion When analyzing the nature of low electron transport in nanoelectronic devices, it is mainly to conduct a comprehensive and effective analysis of the energy level change and the Kondo effect under an external magnetic field, thereby improving the safety and stability of the state of low electron transport. In addition, in the application of few electronic devices in the field of microelectronics in nanoelectronic devices, it is necessary to comprehensively solve the problems that arise in the application process of nanoelectronic devices, so as to improve the application level of nanoelectronic devices.

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